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RM009
Power Amplifier Module for Dual-band GSM900 DCS1800
The RM009 is a dual-band Power Amplifier Module (PAM) designed in a compact Distinguishing Features form factor for Class 4 GSM900 and Class 1 DCS1800 cellular handsets. * High efficiency The module consists a GSM900 PA block and a DCS1800 PA block, matching circuitry for 50 input and output impedances, and bias control circuitry. Two separate Heterojunction Bipolar Transistor (HBT) PA blocks are fabricated on a single Gallium Arsenide (GaAs) die. One PA block operates in the GSM900 band and the other supports the DCS1800 band. The PAM is optimized for three-cell operation with both PAs sharing common power supply pins to distribute current. A custom CMOS integrated circuit contains a current amplifier that minimizes the required power control current (IAPC) to 60 A, typical.
* * * * GSM 54% DCS 45% Input/output matching 50 internal Small outline 9.1 mm x 11.6 mm Low profile 1.50 mm 10% Low APC current 60 A
RF input and output ports are internally matched to 50 to reduce the number of Applications external components for a dual-band design. Switching circuitry receives the band select signal on the band select pin (BS) to switch between GSM (logic 0) * Class 4 GSM900 and Class 1 and DCS (logic 1). Analog Power Control (APC) controls the output power of DCS1800 dual-band cellular handsets each PA selected by the band select signal. The extremely low leakage current (2 A, typical) of the RM009 dual-band module maximizes handset standby time. The functional block diagram shows the relationship of the dual PAs and the CMOS device in the RM009.
Functional Block Diagram
DCS IN
Match
Match
DCS OUT
Power Control Band Select
CMOS Bias Controller
HBT
GSM IN
Match
Match
GSM OUT
Data Sheet Skyworks Solutions, Inc. Proprietary (c) 1999-2002, Skyworks Solutions, Inc., All Rights Reserved.
101258B July 26, 2002
Electrical Specifications
RM009
Power Amplifier Module for Dual-band GSM900 DCS1800 Applications
Electrical Specifications
Table 1 provides the absolute maximum ratings of the RM009, Table 2 shows the recommended operating conditions and Table 3 shows the electrical characteristics.
Table 1. Absolute Maximum Ratings Parameter
Supply Voltage (VCC) Storage Temperature
Minimum
-- -55
Maximum
7 +125
Unit
V C
Table 2. Recommended Operating Conditions Parameter
Supply Voltage (VCC) Temperature
Minimum
2.7 -30
Typical
3.2 --
Maximum
4.5 +85
Unit
V C
Table 3. RM009 Electrical Specifications (1 of 2) Parameter Symbol Test Condition Minimum Typical Maximum Units
GSM Mode (f = 880 MHz to 915 MHz and PIN = 8 dBm to 12 dBm)
Frequency Range GSM900 Input Power GSM900 Leakage Current f1 PINGSM ILEAKAGE -- -- VCC = 4.5 V VAPC = 0 V VBS = 0 V PINGSM = 10 dBm POUTGSM = 34.5 dBm PINGSM = 10 dBm PINGSM = 10 dBm VCC = 2.7 V TCASE = -20 C to +85 C 880 8 -- -- 10 5 915 12 -- MHz dBm A
Efficiency GSM900 GSM 2nd and 3rd Harmonic Distortion Output Power GSM900
GSM H2GSM POUTGSM POUTGSM
46 -39.5 34.5 32
54 -45 35 --
-- -- -- --
% dBc dBm dBm
Input VSWR Isolation GSM900 Cross Isolation Noise Floor GSM900
VSWR(IN) All -- -- -- PINGSM = 10 dBm APC= 0.2 V POUTGSM = 34.5 dBm PINGSM = 10 dBm, BW = 100 kHz, fo 20 MHz offset --
-- -- -- --
1.5:1 -40 -30 --
2:1 -30 -25 -84
-- dBm dBm dBm
Bandselect Thresholds: GSM VBSLMAX DCS VBSHMIN -- 2.0 0.5 V V
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Skyworks Solutions, Inc. Proprietary
101258B July 26, 2002
RM009
Power Amplifier Module for Dual-band GSM900 DCS1800 Applications
Table 3. RM009 Electrical Specifications (2 of 2) Parameter
Full Power Control Voltage Rise Time and Fall Time
Electrical Specifications
Symbol
-- --
Test Condition
POUTGSM = 34.5 dBm POUTGSM = 34.5 dBm
Minimum Typical Maximum Units
-- -- 2.0 1.8 -- -- -- sec
DCS Mode (f = 1710 MHz to 1785 MHz and PIN = 6 dBm to 10 dBm)
Frequency Range DCS1800 Input Power DCS1800 Control Voltage Range Control Current Into Vapc Leakage Current f2 PINDCS VAPC lAPC ILEAKAGE -- -- -- -- VCC = 3.2 V VAPC = 0 V VBS = 0 V PINDCS = 8 dBm POUTDCS = 31.5 dBm PINDCS = 8 dBm PINDCS = 8 dBm VCC = 2.7 V TCASE = -20 C to +85 C 1710 6 0.2 -- -- -- 8 -- 60 5 1785 10 2.7 -- -- MHz dBm V A A
Efficiency DCS1800 DCS 2nd and 3rd Harmonic Distortion Output Power DCS1800
DCS H2DCS POUTDCS POUTDCS
38.2 -40.5 31.5 29.5
45.0 -50 32 --
-- -- -- --
% dBc dBm dBm
Input VSWR Isolation DCS1800 Stability Condition VSWR(LOAD) (no spurious oscillation > -35 dBm)
VSWR(IN) All -- PINDCS = 8 dBm APC = 0.2 V --
-- --
1.5:1 -45
2:1 -33
-- dBm
--
--
--
8:1 all angles 10:1 all angles -76
--
Load Mismatch VSWR(LOAD) (no damage/degradation) Noise Floor DCS1800
-- --
-- PINDCS = 8 dBm BW = 100 kHz fo 20 MHz offset POUTDCS = 31.5 dBm --
-- --
-- --
-- dBm
Full Power Control Voltage Bandselect Thresholds:
-- GSM VBSLMAX DCS VBSHMIN
--
2.0 --
-- 0.5 --
-- V V sec
2.0 POUTDCS = 31.5 dBm -- 1.8
Rise Time and Fall Time unless specified otherwise
--
NOTE(S): TCASE = 25 C, RL = 50 , pulsed operation with pulse width = 577 sec and duty cycle of 1:8, VCC = 3.2 V,
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Electrical Specifications
RM009
Power Amplifier Module for Dual-band GSM900 DCS1800 Applications
Figure 1. Typical RM009 Application
C
10 F ELECTROLYTIC
10 pF DCS IN
Vbat
HBT
DCS OUT 2 14
Match Match
10 pF
B
APC from PAC
APC
12
CMOS Bias Controller
B
BS (from Baseband)
RM009
16 4
Match Match
GSM OUT 10
33 pF
GSM IN
VCC C
6 VCC1
8 VCC2
100 pF A 10 nF A
9
GND
A B C
Place caps at closest proximity to PA module with the capacitor ground directly connected to the PAM grounds. Optional depending on PAC circuit. Common connect Vbat to all VCC pins.
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RM009
Power Amplifier Module for Dual-band GSM900 DCS1800 Applications
Package Dimensions and Pin Descriptions
Package Dimensions and Pin Descriptions
Figure 2 is a mechanical diagram of the pad layout for the 16-pin leadless, RM009 Power Amplifier module. Figure 3 shows the device pin configuration and the pin numbering convention, which starts with pin 1 in the upper left and increments counter-clockwise around the package. Pin assignments and their functional descriptions are listed in Table 4. Figure 4 shows typical case markings.
Figure 2. RM009 PAM Package Dimensions--16-Pin Leadless Module (All Views)
R0.381 Typ PIN 1 2.286 0.051 0.762 Typ R0.860 Typ 0.127 Ref 1.905 0.051 0.737 0.051 3.899 0.051 1.905 0.051 BOTTOM VIEW 11.60 +0.20/-0.08 1.02 Typ 1.55 10% FRONT VIEW 2.286 0.051
101058_004
TOP VIEW
SIDE VIEW
NOTE(S): 1. All contact points are gold plated, lead free-surfaces. 2. All dimensions are in millimeters.
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9.10 +0.20, -0.08
5
Package Dimensions and Pin Descriptions
RM009
Power Amplifier Module for Dual-band GSM900 DCS1800 Applications
Figure 3. RM009 Pin Configuration--16-Pin Leadless Module (Top View)
BS GND GND APC
1
16
15
14
13 GND
DCS IN
2 3
12
DCS OUT
GND
11
GND
GSM IN
4
10
GSM OUT
GND
5
6
VCC1
7
GND
8
VCC2
9
GND
101258_002
Table 4. RM009 Signal Description Pin #
1 2 3 4 5 6 7 8
Name
GND DCS IN GND GSM IN GND VCC1 GND VCC2 Ground
Description
Pin #
9 10 11 12 13 14 15 16
Name
GND GSM OUT GND DCS OUT GND APC GND BS Ground
Description
RF input to DCS PA (DC coupled) Ground RF input to GSM PA Ground Power supply for PA driver stages/ CMOS Bias Controller Ground Power supply for PA output stages
GSM RF output (DC coupled) Ground DCS RF output (DC coupled) Ground Analog Power Control Ground Bandselect
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Skyworks Solutions, Inc. Proprietary
101258B July 26, 2002
RM009
Power Amplifier Module for Dual-band GSM900 DCS1800 Applications
Package and Handling Information
Package and Handling Information
Because of its sensitivity to moisture absorption, this device package is baked and vacuum packed prior to shipment. Instructions on the shipping container label must be followed regarding exposure to moisture after the container seal is broken, otherwise, problems related to moisture absorption may occur when the part is subjected to high temperature during solder assembly. The RM009 is capable of withstanding an MSL 3/240 C solder reflow. Care must be taken when attaching this product, whether it is done manually or in a production solder reflow environment. If the part is attached in a reflow oven, the temperature ramp rate should not exceed 5 C per second; maximum temperature should not exceed 240 C. If the part is manually attached, precaution should be taken to insure that the part is not subjected to temperatures exceeding 240 C for more than 10 seconds. For details on both attachment techniques, precautions, and handling procedures recommended by Skyworks, please refer to Application Note: PCB Design and SMT Assembly/Rework, Document Number 101752. Additional information on standard SMT reflow profiles can also be found in the JEDEC Standard J-STD-020A.
-
Figure 4. Typical Case Markings
SKYWORKS
Mark Pin 1 Identifier Manufacturing Part Number-Revision Number RM009-NN NXXXXX.XX YYWW MEX Lot Number YY = Manufacture Year WW = Week Package Sealed MEXICO = Country Code
101258_006
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Package and Handling Information
RM009
Power Amplifier Module for Dual-band GSM900 DCS1800 Applications
Production quantities of this product are shipped in the standard tape and reel format illustrated in Figure 5.
Figure 5. RM009 Tape and Reel - 9.1 mm x 11.6 mm
12.00 0.10
4.00 0.10
1.50 0.10
2.00 0.10
1.75 0.10
11.50 0.10 PIN 1 INDICATOR 1.50 0.25 8 MAX. 0.330 0.013 5 MAX. 8
45 MAX
9.40 0.10
2.02 0.10
45 MAX
11.90 0.10
A0
K0
B0
3M Carrier Tape
24.00 -0.10
+0.30
9.1x11.6
NOTE(S): 1. Carrier tape material: Black conductive polycarbonate 2. Carrier tape part number: US 042 281 3. Cover tape material: Conductive Pressure Sensitive Adhesive (PSA) 4. Cover tape width: 21.3 mm 5. Number of parts per 330 mm (diameter) x 24 mm reel: 2000 6. All diagram dimensions in millimeters
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Skyworks Solutions, Inc. Proprietary
101258B July 26, 2002
RM009
Power Amplifier Module for Dual-band GSM900 DCS1800 Applications
Electrostatic Discharge Sensitivity
Electrostatic Discharge Sensitivity
RM009 is a Class I device. Figure 6 lists the Electrostatic Discharge (ESD) immunity level for each pin of the RM009 product. The numbers in Figure 6 specify the ESD threshold level for each pin where the I-V curve between the pin and ground starts to show degradation. The ESD testing was performed in compliance with MIL-STD-883E Method 3015.7 using the Human Body Model. Since 2000 volts represents the maximum measurement limit of the test equipment used, pins marked > 2000 V pass 2000 V ESD stress.
Figure 6. ESD Sensitivity Areas (Top view)
> +2000 V < -2000 V BS GND > +2000 V < -2000 V APC GND
1
16
15
14
13
GND
> +2000 V DCS IN < -14500 V GND
2 3
12
DCS OUT
> +2000 V < -2000 V
RM009
11
GND
+425 V GSM IN -325 V
4
10
> +2000 V GSM OUT < -2000 V
GND
5
6
7
8
9
GND
VCC1 GND VCC2 > +2000 V > +2000 V < -2000 V < -2000 V
100781_005
Various failure criteria can be utilized when performing ESD testing. Many vendors employ relaxed ESD failure standards which fail devices only after "the pin fails the electrical specification limits" or "the pin becomes completely non-functional". Skyworks employs most stringent criteria, fails devices as soon as the pin begins to show any degradation on a curve tracer. To avoid ESD damage, both latent and visible, it is very important that the product assembly and test areas follow the Class-1 ESD handling precautions listed in Table 5.
Table 5. Precautions for GaAs ICs with ESD Thresholds Greater Than 200 V But Less Than 2000 V
Personnel Grounding Wrist Straps Conductive Smocks, Gloves and Finger Cots Antistatic ID Badges Protective Workstation Dissipative Table Tops Protective Test Equipment (Properly Grounded) Grounded Tip Soldering Irons Conductive Solder Suckers Static Sensors Facility Relative Humidity Control and Air Ionizers Dissipative Floors (less than 109 to GND) Protective Packaging & Transportation Bags and Pouches (Faraday Shield) Protective Tote Boxes (Conductive Static Shielding) Protective Trays Grounded Carts Protective Work Order Holders
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Technical Information
RM009
Power Amplifier Module for Dual-band GSM900 DCS1800 Applications
Technical Information
CMOS Bias Controller Characteristics
The CMOS die within the PAM performs several functions that are important to the overall module performance. Some of these functions must be considered for development of the power ramping features in a 3GPP compliant transmitter power control loop1. Power ramping considerations will be discussed later in this section. The four main functions that will be described in this section are Standby Mode Control, Band Select, Voltage Clamp, and Current Buffer. The functional block diagram is shown in Figure 7.
Figure 7. Functional Block Diagram
Band Select (pin16)
vodcs
CComp
APC input (pin14)
Supply (pin6)
cpgsm
CComp
cpdcs
vogsm
Combinational Logic Voltage Clamp
Bandgap Reference
CMOS bias controller
DCS1800 bias out ground GSM900 bias out
Cbypass
RF Isolation
Cbypass
RF Isolation
Dual Band GaAs Power Amplifier Die
100956_01
1.
Please refer to 3GPP TS 05.05, Digital Cellular Communications System (Phase 2+); Radio Transmission and Reception. All GSM specifications are now the responsibility of 3GPP. The standards are available at http://www.3GPP.org/specs/specs.htm
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RM009
Power Amplifier Module for Dual-band GSM900 DCS1800 Applications
Standby Mode Control
Technical Information
The Combinational Logic cell includes enable circuitry that monitors the APC ramping voltage from the power amplifier controller (PAC) circuit in the GSM transmitter. Typical handset designs directly connect the PA VCC to the battery at all times, and for some PA manufacturers this requires a control signal to set the device in or out of standby mode. The Skyworks PAM does not require a Transmit Enable input because it contains a standby detection circuit that senses the VAPC to enable or disable the PA. This feature helps minimize battery discharge when the PA is in standby mode. When VAPC is below the enable threshold voltage, the PA goes into a standby mode, which reduces battery current (ICC) to 6 A, typical, under nominal conditions. For voltages less than 700 mV at the APC input (pin 14), the PA bias is held at ground. As the APC input exceeds the enable threshold, the bias will activate. After an 8 sec delay, the amplifier internal bias will ramp quickly to match the ramp voltage applied to the APC input. In order for the internal bias to precisely follow the APC ramping voltage, it is critical that a ramp pedestal is set to the APC input at or above the enable threshold level with a timing at least 8 sec prior to ramp-up. This will be discussed in more detail in the following section, "Power Ramping Considerations for 3GPP Compliance".
Band Select
The Combinational Logic cell also includes a simple gate arrangement that selects the desired operational band by activating the appropriate current buffer. The voltage threshold level at the Band Select input (pin 16) will determine the active path of the bias output to the GaAs die.
Voltage Clamp
The Voltage Clamp circuit will limit the maximum bias voltage output applied to the bases of the HBT devices on the GaAs die. This provides protection against electrical overstress (EOS) of the active devices during high voltage and/or load mismatch conditions. Figure 8 shows the typical transfer function of the APC input to buffer output under resistively loaded conditions. Notice the enable function near 600 mV, and the clamp acting at 2.15 V, corresponding to a supply voltage of 4.0 V.
Figure 8. Base Bias Voltage vs. APC Input, VCC = 4.0 V
2.5
2.0
Base Bias (volts)
1.5
clamping occurs
1.0
0.5
0.0 0.0 0.5 1.0 1.5 APC input (volts) 2.0 2.5 3.0
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Technical Information
RM009
Power Amplifier Module for Dual-band GSM900 DCS1800 Applications
Due to output impedance effects, the bias of the GaAs devices increases as the supply voltage increases. The Voltage Clamp is designed to gradually decrease in level as the battery voltage increases. The performance of the clamp circuit is enhanced by the band gap reference that provides a supply-, process-, and temperature-independent reference voltage. The transfer function relative to VBAT is shown in Figure 9. For battery voltages below 3.4 V, the base bias voltage is limited by the common mode range of the buffer amplifier. For battery voltages above 3.4 V, the clamp limits the base bias.
Figure 9. Base Bias Clamp Voltage vs. Supply Voltage
2.6 2.5 clamp 2.4 Base Bias Clamp (Volts) 2.3 2.2 2.1 2.0 1.9 1.8 1.7 3.00 3.25 3.50 3.75 Vcc (Volts)
101258_013b
4.00
4.25
4.50
Current Buffer
The output buffer amplifier performs a vital function in the CMOS device by transferring the APC input voltage ramp to the base of the GaAs power devices. This allows the APC input to be a high impedance port, sinking only 10 A, typical, assuring no loading effects on the PAC circuit. The buffers are designed to source the high GaAs base currents required, while allowing a settling time of less than 8 sec for a 1.5 V ramp.
Power Ramping Considerations for 3GPP Compliance
These are the primary variables in the power control loop that the system designer must control: * * * * * software control of the DSP / DAC software control of the transmitter timing signals ramp profile attributes - pedestal, number of steps, duration of steps layout of circuit / parasitics RC time constants within the PAC circuit design
All of these variables will directly influence the ability of a GSM transmitter power control loop to comply with 3GPP specifications. Although there is a specific time mask template in which the transmitter power is allowed to ramp up, the method is very critical. The 3GPP system specification for switching transients results in a
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Skyworks Solutions, Inc. Proprietary
101258B July 26, 2002
RM009
Power Amplifier Module for Dual-band GSM900 DCS1800 Applications
Technical Information
requirement to limit the edge rate of output power transitions of the mobile. Switching transients are caused by the transition from minimum output power to the desired output power, and vice versa. The spectrum generated by this transition is due to the ramping waveform amplitude modulation imposed on the carrier. Sharper transitions tend to produce more spectral "splatter" than smooth transitions. If the transmit output power is ramped up too slowly, the radio will violate the time mask specification. In this condition, the radio may not successfully initiate or maintain a phone call. If the transmit output power is ramped up too quickly, this will cause RF "splatter" at certain frequency offsets from the carrier as dictated by the 3GPP specification. This splatter, known as Output RF Spectrum (ORFS) due to Switching Transients, will increase the system noise level, which may knock out other users on the system. The main difficulty with TDMA power control is allowing the transmitter to ramp the output power up and down gradually so switching transients are not compromised while meeting the time mask template at all output power levels in all operational bands. The transmitter has 28 sec to ramp up power from an off state to the desired power level. The GSM transmitter power control loop generally involves feedback around the GaAs PA, which limits the bandwidth of signals that can be applied to the PA bias input. Since the PA is within the feedback loop, its own small-signal frequency response must exhibit a bandwidth 5 to 10 times that of the power control loop. As discussed in the previous section, the PA bias is held at ground for inputs less than 700mV. As the APC input exceeds the enable threshold, the bias will activate. After an 8 s delay, the amplifier internal bias will quickly ramp to match the ramp voltage applied to the VAPC input. Since the bias must be wide band relative to the power control loop, the ramp will exhibit a fast edge rate. If the APC input increases beyond 1V before the 8 s switching delay is allowed to occur after the bias is enabled, the PA will have significant RF output as the internal bias approaches the applied bias. During this ramp, the internal power control is running "open loop" and the edge rates are defined by the frequency response of the PA bias rather than that of the power control loop. This open loop condition will result in switching transients that are directly correlated to the PA bias bandwidth. Application of an initial APC voltage, which enables the bias at least 8 s before the VAPC voltage is ramped, will ensure that the internal bias of the PAM will directly follow the applied VAPC. As a result, the power control loop will define all edge transitions rather than the PA internal bandwidth defining the transition. Figures 10 and 11 show the relationship of the internal bias relative to the applied APC in two cases. One case has ramping starting from ground; the other case has ramping starting with an initial enable pedestal of 700 mV It is evident that the pedestal level is critical to . ensure a predictable and well behaved power control loop. To enable the CMOS driver in the PAM prior to ramp-up, a PAC output pedestal level to the APC input of the PAM (pin 14) should be set to about 700 mV. This pedestal level should have a duration of at least 8 sec directly prior to the start of ramp up. Figure 12 shows typical signals and timings measured in a GSM transmitter power control loop. This particular example is at GSM Power Level 5, Channel 62. The oscilloscope traces are TxVCO_enable, PAC_enable, DAC Ramp, and VAPC (pin 14).
NOTE:
When the TxVCO is enabled, the pedestal becomes set at the APC input of the PAM, then the PAC is enabled, and finally the DAC ramp begins.
The device specifications for enable threshold level and switching delay are shown in Table 3.
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Technical Information
RM009
Power Amplifier Module for Dual-band GSM900 DCS1800 Applications
Figure 10. PAM Internal Bias Performance - No Pedestal Applied
1.6 1.4 1.2
Bias Voltage (V)
7 s
1.0 0.8 0.6 0.4 0.2 0.0 0.0 5.0 10.0 15.0
Time (s)
101258_013c
Enable threshold 550 mV
Vapc In (V) Internal bias (V)
20.0
25.0
30.0
35.0
Figure 11. PAM Internal Bias Performance - Pedestal Applied
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 5.0 10.0 15.0 Time (s)
101258_013d
Bias Voltage (V)
Switching delay 7 s
Vapc In (V) Internal Bias (V) Enable threshold 550 mV
20.0
25.0
30.0
35.0
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Skyworks Solutions, Inc. Proprietary
101258B July 26, 2002
RM009
Power Amplifier Module for Dual-band GSM900 DCS1800 Applications
Figure 12. GSM Transmitter - Typical Ramp-up Signals
Technical Information
T
1
DAC Ramp
2
TxVCO_enable
PAC_enable 3 VAPC 4 Ch1 Ch3 200 mV 1.00 V Ch2 Ch4
VAPC Pedestal
1.00 V 500 mV
BW M
10.0 s
A
Ch2
500 mV
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Ordering Information
Model Number
RM009
Manufacturing Part Number
RM009-19
Product Revision
19
Package
Operating Temperature
-30 C to +85 C
Revision History
Revision
A B
Level
Date
June 2001 February 26, 2003
Description Initial Release Add: Packaging and Handling Information section, Technical Information Section Revise: Table 3
References:
Application Note: PCB Design and SMT Assembly/Rework, Document Number 101762 JEDEC Standard J-STD-020A
(c) 2001, 2002, Skyworks Solutions, Inc. All Rights Reserved. Information in this document is provided in connection with Skyworks Solutions, Inc. ("Skyworks") products. These materials are provided by Skyworks as a service to its customers and may be used for informational purposes only. Skyworks assumes no responsibility for errors or omissions in these materials. Skyworks may make changes to its products, specifications and product descriptions at any time, without notice. Skyworks makes no commitment to update the information and shall have no responsibility whatsoever for conflicts, incompatibilities, or other difficulties arising from future changes to its products and product descriptions. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as may be provided in Skyworks' Terms and Conditions of Sale for such products, Skyworks assumes no liability whatsoever. THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, RELATING TO SALE AND/OR USE OF SKYWORKSTM PRODUCTS INCLUDING WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, PERFORMANCE, QUALITY OR NON-INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. SKYWORKS FURTHER DOES NOT WARRANT THE ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN THESE MATERIALS. SKYWORKS SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS THAT MAY RESULT FROM THE USE OF THESE MATERIALS. SkyworksTM products are not intended for use in medical, lifesaving or life-sustaining applications. Skyworks' customers using or selling SkyworksTM products for use in such applications do so at their own risk and agree to fully indemnify Skyworks for any damages resulting from such improper use or sale. The following are trademarks of Skyworks Solutions, Inc.: SkyworksTM, the Skyworks symbol, and "Breakthrough Simplicity"TM. Product names or services listed in this publication are for identification purposes only, and may be trademarks of third parties. Thirdparty brands and names are the property of their respective owners. Additional information, posted at www.skyworksinc.com, is incorporated by reference.
General Information: Skyworks Solutions, Inc. 4311 Jamboree Rd. Newport Beach, CA. 92660-3007 www.skyworksinc.com

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